Ultrathin septuple layered PbBi2Se4 nanosheets
作者： Arindom Chatterjee , Satya N. Guin , Kanishka Biswas
DOI: 10.1039/C4CP01885K
关键词: Topological insulator 、 Nanotechnology 、 Spectroscopy 、 Optoelectronics 、 Phase (matter) 、 Seebeck coefficient 、 Electrical mobility 、 Surface states 、 Selenide 、 Band gap 、 Materials science
摘要: Layered lead bismuth selenide, PbBi2Se4, an intergrowth compound of PbSe (rocksalt) and Bi2Se3 (hexagonal), is a topological insulator in the bulk phase. We present simple solution based synthesis two dimensional (2D) few seven atomic (septuple) layered PbBi2Se4 nanosheets (4–7 nm thick) for first time. The excellent electrical transport ultrathin attributed to presence dominant surface states that offer high mobility (∼153 cm2 V−1 s−1) scattering resistant carriers. Ultrathin 3–5 SLs shows n-type semiconducting behaviour with band gap ∼0.6 eV, which confirmed by optical spectroscopy thermopower measurements.
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