作者: Sachin R. Suryawanshi , Satya N. Guin , Arindom Chatterjee , Vikas Kashid , Mahendra A. More
DOI: 10.1039/C5TC02993G
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摘要: Atomically thin two-dimensional layered materials have gained wide interest owing to their novel properties and potential for applications in nanoelectronic optoelectronic devices. Here, we present the spectral analysis photo-enhanced field emission studies of a intergrowth PbBi2Se4 nanosheet emitter, performed at base pressure ∼1 × 10−8 mbar. The emitter shows turn-on value ∼4.80 V μm−1, corresponding an current density μA cm−2. Interestingly, when cathode was illuminated with visible light, it exhibited lower ∼3.90 maximum ∼893 cm−2 has been drawn applied electric ∼8.40 μm−1. Furthermore, showed reproducible, step-like switching behavior synchronous ON–OFF illumination source. current–time plots reveal excellent stability over duration ∼6 h. Low-frequency noise is significant limitation performance nanoscale electronic on Fast Fourier Transform (FFT) analyzer revealed that observed 1/fα type, α ∼0.99. low frequency noise, emission, reproducible characterized very fast rise fall times propose as new promising candidate vacuum nano-optoelectronic