Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs
作者： Wenchao Chen , Wen-Yan Yin , Erping Li , Mingzhuo Cheng , Jing Guo
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摘要: Electrothermal investigation on vertically aligned single-walled carbon nanotube (SWCNT) contacted phase-change memory (PCM) array is performed using the 3-D time-domain finite-element method. The in-house-developed algorithm verified by comparing simulated results with experimental ones published others. Thermal coupling between adjacent cells, which may cause current leakage and reliability degradation, characterized for PCMs different geometrical parameters, could be caused fabrication variation. It shown that spacing variation PCM cells draws a slight effect their thermal coupling. However, boundary resistance of material–oxide interface SWCNT diameter affect temperature rise significantly. On other hand, it indicated has microampere-scale programming nanosecond-scale response time, make vulnerable to electrostatic discharge (ESD). responses ESD are captured compared, show unintentional can change state result in error programming.
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