Internal Temperature Extraction in Phase-Change Memory Cells During the Reset Operation
作者： Mattia Boniardi , Andrea Redaelli , Innocenzo Tortorelli , Fabio Pellizzer , Agostino Pirovano
关键词: Reset (computing) 、 Phase transition 、 Temperature measurement 、 Chalcogenide 、 Thermal resistance 、 Phase-change memory 、 Electronic engineering 、 Amorphous solid 、 Materials science 、 Memory cell
摘要: The phase-change memory technology is based on a chalcogenide compound able to reversibly switch between two stable states, namely, an amorphous high-resistive state and crystalline low-resistive one, enabling the storage of logical bit. Such phase transition made by electrical pulses delivered cell, force temperature raise within material allow conditions required for change. cell internal needs accurate control, evaluation thermal resistance represents milestone develop thermally efficient architectures gain insights into properties material. An experimental method has been developed then supported electrothermal simulation behavior during program operation, allowing scaling predictions.
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sci-hub.se 参考文章(9)
A. Rodaelli A. L. Lacaita, Electrothermal and phase-change dynamics in chalcogenide-based memories international electron devices meeting. pp. 911- 914 ,(2004) , 10.1109/IEDM.2004.1419330
M. Boniardi, A. Redaelli, A. Pirovano, I. Tortorelli, D. Ielmini, F. Pellizzer, A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 Journal of Applied Physics. ,vol. 105, pp. 084506- ,(2009) , 10.1063/1.3109063
Mattia Boniardi, Daniele Ielmini, Physical origin of the resistance drift exponent in amorphous phase change materials Applied Physics Letters. ,vol. 98, pp. 243506- ,(2011) , 10.1063/1.3599559
A. Redaelli, A. Pirovano, A. Benvenuti, A. L. Lacaita, Threshold switching and phase transition numerical models for phase change memory simulations Journal of Applied Physics. ,vol. 103, pp. 111101- ,(2008) , 10.1063/1.2931951
Roberto Bez, Chalcogenide PCM: a memory technology for next decade international electron devices meeting. pp. 1- 4 ,(2009) , 10.1109/IEDM.2009.5424415
Stanford R. Ovshinsky, Reversible Electrical Switching Phenomena in Disordered Structures Physical Review Letters. ,vol. 21, pp. 1450- 1453 ,(1968) , 10.1103/PHYSREVLETT.21.1450
A. Pirovano, A.L. Lacaita, A. Benvenuti, F. Pellizzer, R. Bez, Electronic switching in phase-change memories IEEE Transactions on Electron Devices. ,vol. 51, pp. 452- 459 ,(2004) , 10.1109/TED.2003.823243
F. Pellizzer, A. Benvenuti, B. Gleixner, Y. Kim, B. Johnson, M. Magistretti, T. Marangon, A. Pirovano, R. Bez, G. Atwood, A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications symposium on vlsi technology. pp. 122- 123 ,(2006) , 10.1109/VLSIT.2006.1705247
A. Pirovano, A.L. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, R. Bez, Scaling analysis of phase-change memory technology international electron devices meeting. ,(2003) , 10.1109/IEDM.2003.1269376