A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
作者： M. Boniardi , A. Redaelli , A. Pirovano , I. Tortorelli , D. Ielmini
DOI: 10.1063/1.3109063
关键词: Conductivity 、 Electrical conduction 、 Phase (matter) 、 Electrical resistivity and conductivity 、 Chalcogenide 、 Materials science 、 Crystallization 、 Condensed matter physics 、 Amorphous solid 、 Band diagram
摘要: The time-stability of the electrical characteristics chalcogenide materials is one most important issues for their use in nonvolatile solid state memory applications. In particular conduction glassy phase evolves with time due to two different physical phenomena: crystallization and so-called low conductivity drift. Despite physics having been extensively studied literature, latter mainly described by phenomenological relationships, its comprehension still under discussion. this paper we study amorphous low-field drift dependence on temperature experienced device. We developed an experimental procedure able separate reversible change material semiconductorlike behavior from nonreversible related mechanism. A model explaining such as a band diagram m...
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