Modified reset state for enhanced read margin of phase change memory
Mattia BONIARDI , Andrea REDAELLI , Fabio PELLIZZER , Daniele IELMINI
2
2014
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories
Mattia Boniardi , Daniele Ielmini , Innocenzo Tortorelli , Andrea Redaelli
Solid-state Electronics 58 ( 1) 11 -16
29
2011
Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy
Jos E. Boschker , Mattia Boniardi , Andrea Redaelli , Henning Riechert
Applied Physics Letters 106 ( 2) 023117
14
2015
Evidence for Thermal-Based Transition in Super-Lattice Phase Change Memory
Mattia Boniardi , Jos E. Boschker , Jamo Momand , Bart J. Kooi
Physica Status Solidi-rapid Research Letters 13 ( 4) 1800634
17
2019
Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices
Mattia Boniardi , Daniele Ielmini , Simone Lavizzari , Andrea L Lacaita
international reliability physics symposium 122 -127
19
2009
Modeling of Atomic Migration Phenomena in Phase Change Memory Devices
Luca Crespi , Andrea Lacaita , Mattia Boniardi , Enrico Varesi
international memory workshop 1 -4
9
2015
Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory
Mattia Boniardi , Andrea Redaelli , Innocenzo Tortorelli , Simone Lavizzari
international memory workshop 1 -3
6
2012
Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays
Mattia Boniardi , Daniele Ielmini , Simone Lavizzari , Andrea L. Lacaita
IEEE Transactions on Electron Devices 57 ( 10) 2690 -2696
43
2010
Physical origin of the resistance drift exponent in amorphous phase change materials
Mattia Boniardi , Daniele Ielmini
Applied Physics Letters 98 ( 24) 243506
130
2011
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses
Daniele Ielmini , Mattia Boniardi
Applied Physics Letters 94 ( 9) 091906
41
2009
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells
Mattia Boniardi , Andrea Redaelli , Andrea Ghetti , Andrea L Lacaita
IEEE Electron Device Letters 34 ( 7) 882 -884
7
2013
Electrical Conductivity Discontinuity at Melt in Phase Change Memory
Luca Crespi , Andrea Ghetti , Mattia Boniardi , Andrea L Lacaita
IEEE Electron Device Letters 35 ( 7) 747 -749
10
2014
Internal Temperature Extraction in Phase-Change Memory Cells During the Reset Operation
Mattia Boniardi , Andrea Redaelli , Innocenzo Tortorelli , Fabio Pellizzer
IEEE Electron Device Letters 33 ( 4) 594 -596
18
2012
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase
Daniele Ielmini , Davide Fugazza , Mattia Boniardi , G Montemurro
Eur. Phase Chang. Ovonic Symp.
4
2010
Energy landscape models for conduction and drift in PCM
Daniele Ielmini , Davide Fugazza , Mattia Boniardi
MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS 1 -12
2011
Segregation-based memory
Mattia Boniardi , Agostino Pirovano , Innocenzo Tortorelli
1
2021
Segregation-based memory
Mattia Boniardi , Agostino Pirovano , Innocenzo Tortorelli
2024
Thermally optimized phase change memory cells and methods of fabricating the same
Mattia Boniardi , Andrea Redaelli
40
2015
Memory arrays and methods of forming memory arrays
Mattia Boniardi , Andrea Redaelli
17
2016
Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system
Mattia Boniardi , Andrea Redaelli
Microelectronic Engineering 137 1 -4
13
2015
andrea redaelli Daniele Ielmini Agostino Pirovano Fabio Pellizzer Simone Lavizzari Jos E. Boschker Raffaella Calarco Andrea Ghetti Giuseppe D'Arrigo Nicola Ciocchini Mario Laudato Antonio Massimiliano Mio Henning Riechert Emanuele Rimini giovanna pellegrino stefania privitera Corrado Spinella Stefano Ambrogio Valeria Bragaglia