Structural and electrical analysis of In-Sb-Te-based PCM cells
作者： Roberto Fallica , Toni Stoycheva , Claudia Wiemer , Massimo Longo
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摘要: … with low Te content (12 at.% and 17 at.%), deposited by metalorganic chemical vapour deposition, were implemented into prototype phase‐change memory devices of size 50 × 50 nm …
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