Thermal properties of In–Sb–Te films and interfaces for phase change memory devices
作者： Roberto Fallica , Claudia Wiemer , Toni Stoycheva , Elena Cianci , Massimo Longo
DOI: 10.1016/J.MEE.2013.10.021
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摘要: Abstract The thermal properties of two different compositions (Te 12 and 17 at.%) In–Sb–Te, obtained by metalorganic chemical vapour deposition, were investigated the 3 ω method. conductivity these chalcogenides, interest for phase change memory applications, was found to decrease with increasing tellurium content. Thermal treatment at 480 °C materials caused an increase their crystallinity improved conductivity. However, this effect more marked in Te-poor composition than Te-rich one. In addition, boundary resistance between In–Sb–Te various capping dielectrics (SiO2, Si3N4 Al2O3) measured it be closely correlated interlayer roughness, as indicated X-ray reflectivity. regard, silicon oxide alumina yielded a smoother less resistive interface nitride.
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