Investigation of electrical characteristics of the In3Sb1Te2 ternary alloy for application in phase-change memory
作者： Eun Tae Kim , Jeong Yong Lee , Yong Tae Kim
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摘要: A simple layered phase-change random access memory (PRAM) cell was fabricated using the In3Sb1Te2 alloy. The overall resistance value of reset state about 70 times larger than that set state. difference between amorphous and crystalline fairly well maintained after 102 cycles. Interestingly, measured current–voltage (I –V) curve showed three obvious steps in By means high temperature X-ray diffractometry (HTXRD) differential scanning calorimetry (DSC) experiments, we confirmed current originate from successive structural transformations ternary (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
sci-hub.se 参考文章(14)
V. Weidenhof, I. Friedrich, S. Ziegler, M. Wuttig, Laser induced crystallization of amorphous Ge2Sb2Te5 films Journal of Applied Physics. ,vol. 89, pp. 3168- 3176 ,(2001) , 10.1063/1.1351868
Tae H. Jeong, Myong R. Kim, Hun Seo, Sang J. Kim, Sang Y. Kim, Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films Journal of Applied Physics. ,vol. 86, pp. 774- 778 ,(1999) , 10.1063/1.370803
Dong-Seok Suh, Eunhye Lee, Kijoon H. P. Kim, Jin-Seo Noh, Woong-Chul Shin, Youn-Seon Kang, Cheolkyu Kim, Yoonho Khang, H. R. Yoon, W. Jo, Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications Applied Physics Letters. ,vol. 90, pp. 023101- ,(2007) , 10.1063/1.2430481
Eun Tae Kim, Jeong Yong Lee, Yong Tae Kim, Investigation of the structural transformation behavior of Ge2Sb2Te5 thin films using high resolution electron microscopy Applied Physics Letters. ,vol. 91, pp. 101909- ,(2007) , 10.1063/1.2783478
Byung Joon Choi, Seol Choi, Yong Cheol Shin, Cheol Seong Hwang, Jin Wook Lee, Jaehack Jeong, Yoon Jung Kim, Sung-Yeon Hwang, Suk Kyoung Hong, Cyclic PECVD of Ge2Sb2Te5 Films Using Metallorganic Sources Journal of The Electrochemical Society. ,vol. 154, ,(2007) , 10.1149/1.2456199
Yoshihito Maeda, Hisashi Andoh, Isao Ikuta, Hiroyuki Minemura, Reversible phase‐change optical data storage in InSbTe alloy films Journal of Applied Physics. ,vol. 64, pp. 1715- 1719 ,(1988) , 10.1063/1.342502
Y. J. Park, J. Y. Lee, M. S. Youm, Y. T. Kim, H. S. Lee, Crystal structure and atomic arrangement of the metastable Ge2Sb2Te5 thin films deposited on SiO2∕Si substrates by sputtering method Journal of Applied Physics. ,vol. 97, pp. 093506- ,(2005) , 10.1063/1.1877821
H. J. Shin, Youn-Seon Kang, Anass Benayad, Ki-Hong Kim, Y. M. Lee, M.-C. Jung, Tae-Yon Lee, Dong-Seok Suh, Kijoon H. P. Kim, CheolKyu Kim, Yoonho Khang, Effect of indium on phase-change characteristics and local chemical states of In–Ge–Sb–Te alloys Applied Physics Letters. ,vol. 93, pp. 021905- ,(2008) , 10.1063/1.2959730
Matthias Wuttig, Noboru Yamada, Phase-change materials for rewriteable data storage Nature Materials. ,vol. 6, pp. 824- 832 ,(2007) , 10.1038/NMAT2009
Guo-Fu Zhou, Materials aspects in phase change optical recording Materials Science and Engineering A-structural Materials Properties Microstructure and Processing. ,vol. 304, pp. 73- 80 ,(2001) , 10.1016/S0921-5093(00)01448-9