Phase transformation mechanism of In–Sb–Te through the boundary reaction between InSb and InTe
作者： Yong Tae Kim , Eun Tae Kim , Chung Soo Kim , Jeong Yong Lee
关键词: Boundary (topology) 、 Crystallography 、 Diffusion 、 Condensed matter physics 、 Phase (matter) 、 Atomic configuration 、 Boundary region 、 Crystallization temperature 、 Thin film 、 Lattice distortion 、 Chemistry
摘要: The boundary reaction between InSb and InTe bilayers shows that In3Sb1Te2 (IST) is formed at the side first due to diffusion of Sb atoms from rather than Te crystallization temperature IST. into changes atomic configuration InTe, which leads small lattice distortion a coherent region for formation IST crystalline thin films. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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