Apparatus and method for determining the active dopant profile in a semiconductor wafer

摘要: A method (1) creates charge carriers in a concentration that changes periodic manner (also called “modulation”) only with respect to time, and (2) determines the number of created carrier creation region by measuring an interference signal obtained between reference beam portion probe is reflected at various depths semiconductor material, comparing measurement corresponding values simulation (e.g. graphs such measurements for different junction depths). Various properties (such as power phase) are functions depth which reflection occurs, can be measured determine junction, profile active dopants. Therefore, just-described interfered formed front surface phase amplitude resulting therefrom both measured. Alternatively, difference first (obtained variable surface) second depths) indicates depth.