Preparation of a-Si:H and a-SiGe:H nip cells at high rates using a 70 MHz VHF PECVD technique

摘要: A 70 MHz Very High Frequency (VHF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique has been used to prepare i-layers for small area, single-junction a-Si:H and a-SiGe:H nip cells triple-junction devices at deposition rates as high 10 A/s. For both the under optimized conditions, efficiencies light stability remain relatively constant i-layer rate is varied from 1 Also stable types of are similar those made in same system low (1 A/s) using standard 13.56 PECVD technique. Triple-junction a-Si:H/a-SiGe:H/a-SiGe:H have fabricated VHF all near These pre-light soaked active area between 9.5 10% total 9.0 9.5%. Considering these results, method a pr...