Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation
作者： J. J. Wierer , A. A. Allerman , E. J. Skogen , A. Tauke-Pedretti , C. Alford
DOI: 10.1063/1.4896783
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摘要: Layer disordering and doping compensation of an Al0.028Ga0.972N/AlN superlattice by implantation are demonstrated. The as-grown sample exhibits intersubband absorption at ∼1.56 μm which is modified when subject to a silicon implantation. After implantation, the decreases shifts longer wavelengths. Also, with increasing implant dose, decreases. It shown that both layer heterointerfaces from vacancies produced during cause changes in absorption. Such method useful for removing spatially defined areas III-nitride optoelectronic devices by, example, creating low-loss optical waveguides monolithically can be integrated operating as electro-absorption modulators.
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sci-hub.se 参考文章(36)
Norio Iizuka, Kei Kaneko, Nobuo Suzuki, Takashi Asano, Susumu Noda, Osamu Wada, Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells Applied Physics Letters. ,vol. 77, pp. 648- 650 ,(2000) , 10.1063/1.127073
M Beeler, E Trichas, E Monroy, III-nitride semiconductors for intersubband optoelectronics: a review Semiconductor Science and Technology. ,vol. 28, pp. 074022- ,(2013) , 10.1088/0268-1242/28/7/074022
D. G. Deppe, G. S. Jackson, N. Holonyak, R. D. Burnham, R. L. Thornton, Coupled stripe AlxGa1−xAs‐GaAs quantum well lasers defined by impurity‐induced (Si) layer disordering Applied Physics Letters. ,vol. 50, pp. 632- 634 ,(1987) , 10.1063/1.98103
J. J. Wierer, A. A. Allerman, Q. Li, Silicon impurity-induced layer disordering of AlGaN/AlN superlattices Applied Physics Letters. ,vol. 97, pp. 051907- ,(2010) , 10.1063/1.3478002
Jung-Seung Yang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki, None, Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy Applied Physics Express. ,vol. 2, pp. 051004- ,(2009) , 10.1143/APEX.2.051004
C. Uzan-Saguy, J. Salzman, R. Kalish, V. Richter, U. Tish, S. Zamir, S. Prawer, Electrical isolation of GaN by ion implantation damage: Experiment and model Applied Physics Letters. ,vol. 74, pp. 2441- 2443 ,(1999) , 10.1063/1.123874
Nobuo Suzuki, Norio Iizuka, Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells Japanese Journal of Applied Physics. ,vol. 38, pp. L363- L365 ,(1999) , 10.1143/JJAP.38.L363
Wataru Terashima, Hideki Hirayama, Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate Physica Status Solidi (c). ,vol. 8, pp. 2302- 2304 ,(2011) , 10.1002/PSSC.201000878
A. Vardi, G. Bahir, F. Guillot, C. Bougerol, E. Monroy, S. E. Schacham, M. Tchernycheva, F. H. Julien, Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures Applied Physics Letters. ,vol. 92, pp. 011112- ,(2008) , 10.1063/1.2830704
Alex S. W. Lee, E. Herbert Li, Effect of interdiffusion of quantum well infrared photodetector Applied Physics Letters. ,vol. 69, pp. 3581- 3583 ,(1996) , 10.1063/1.117213