Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells

摘要: The effect of the built-in field caused by piezoelectric and spontaneous polarization inherent in nitride quantum wells on intersubband transition (ISBT) is studied. Measured absorption wavelengths Al0.65Ga0.35N/GaN multiquantum suggest existence a strong about 2 MV/cm. For thick wells, well reduces effective width, which drastically shortens ISBT wavelength increases relaxation time. thin barriers barrier height, affects formation second subband. Reduction strength important achieving short ISBT.