InP-based high sensitivity pin/HEMT/HBT monolithic integrated optoelectronic receiver
作者： K. Kiziloglu , M.W. Yung , Hsiang-Chi Sun , S. Thomas , M.B. Kardos
DOI: 10.1109/ICIPRM.1998.712506
关键词:
摘要: We report the first successful demonstration of a pin diode/HEMT/HBT monolithic integrated optoelectronic receiver lattice-matched on InP substrates for multi-gigabit long wavelength applications. Our approach utilizes stacked single layer MBE growth HEMTs and HBTs after which HBT layers are patterned selectively wet etched to expose HEMT layers. The subsequent process steps feature with 0.12 /spl mu/m T-gates, 2 emitter fingers, TaN thin-film resistors, SiN MIM capacitors, photodetector antireflection coatings. photodiodes comprise base-collector junctions thus fabricated at same time as HBTs. circuit high-gain three stage amplifier within transimpedance feedback loop front end. high f/sub T/ fully fabrication together photodiode result in very small input node capacitance low noise. A flat gain -6 k/spl Omega/ bandwidth 2.5 GHz is observed supply voltages between 2.8-3.0 V. Circuit operation up 7 Gb/s obtained an PRBS length 2/sup 7/-1. At 10/sup -9/ BER, sensitivities -24.7, -21.2 -18.5 dBm 2.5, 4 respectively. Gb/s, good photocurrent sensitivity (/spl eta/P) -27.9 measured.
ucsb.edu
sci-hub.se 参考文章(10)
Long Tran, R. Isobe, M. Delaney, R. Rhodes, D. Jang, J. Brown, Loi Nguyen, Minh Le, M. Thompson, Takyiu Liu, High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs international microwave symposium. ,vol. 1, pp. 9- 12 ,(1996) , 10.1109/MWSYM.1996.508451
L.M. Lunardi, InP-based monolithically integrated photoreceivers international conference on indium phosphide and related materials. pp. 471- 474 ,(1997) , 10.1109/ICIPRM.1997.600196
K. Kızıloḡlu, M.W. Yung, H.C. Sun, S. Thomas, M.B. Kardos, R.H. Walden, J.J. Brown, W.E. Stanchina, InP-based mixed device (HEMT/HBT) technology on planar substrate for high performance mixed-signal and optoelectronic circuits Electronics Letters. ,vol. 33, pp. 2065- 2066 ,(1997) , 10.1049/EL:19971384
H. Wang, E. Lin, D.C.W. Lo, R. Lai, L. Tran, J. Cowles, Y.C. Chen, T. Block, P.H. Liu, H.C. Yen, K. Stamper, A single-chip 94-GHz frequency source using InP-based HEMT-HBT integration technology radio frequency integrated circuits symposium. ,vol. 1, pp. 79- 81 ,(1998) , 10.1109/RFIC.1997.598746
ROBERT H. WALDEN, A REVIEW OF RECENT PROGRESS IN InP-BASED OPTOELECTRONIC INTEGRATED CIRCUIT RECEIVER FRONT-ENDS International Journal of High Speed Electronics and Systems. ,vol. 09, pp. 631- 642 ,(1998) , 10.1142/S0129156498000269
S. van Waasen, A. Umbach, U. Auer, H.-G. Bach, R.M. Bertenburg, G. Janssen, G.G. Mekonnen, W. Passenberg, R. Reuter, W. Schlaak, C. Schramm, G. Unterborsch, P. Wolfram, F.-J. Tegude, 27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier IEEE Journal of Solid-state Circuits. ,vol. 32, pp. 1394- 1401 ,(1997) , 10.1109/4.628748
D.C. Streit, D.K. Umemoto, K.W. Kobayashi, A.K. Oki, Monolithic HEMT-HBT integration by selective MBE IEEE Transactions on Electron Devices. ,vol. 42, pp. 618- 623 ,(1995) , 10.1109/16.372063
V. Hurm, W. Benz, W. Bronner, T. Fink, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, A. Leven, M. Ludwig, C. Moglestue, B. Raynor, J. Rosenzweig, M. Schlechtweg, A. Thiede, S. Weisser, Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs ieee gallium arsenide integrated circuit symposium. pp. 197- 200 ,(1997) , 10.1109/GAAS.1997.628268
Loi Nguyen, Minh Le, Michael Delaney, Mark Lui, Takyiu Liu, Julia Brown, Rick Rhodes, Mark Thompson, Catherine Hooper, Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs international microwave symposium. pp. 345- 347 ,(1993) , 10.1109/MWSYM.1993.276807
W.E. Stanchina, J.F. Jensen, R.H. Walden, M. Hafizi, H.-C. Sun, T. Liu, C. Raghavan, K.E. Elliott, M. Kardos, A.E. Schmitz, Y.K. Brown, M.E. Montes, M. Yung, An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs ieee gallium arsenide integrated circuit symposium. pp. 31- 34 ,(1995) , 10.1109/GAAS.1995.528954