Effects of intrinsic layer thickness variations on heterojunction Pin Diode I–V characteristics
作者： Muniba Ahmad
DOI: 10.1109/INTELSE.2016.7475136
关键词:
摘要: A heterojunction PIN Diode in which an intrinsic layer (I-layer) of In0.53Ga0.47As is sandwiched between N-layer In0.52Al0.48As and p-layer modelled investigated using TCAD simulation. At all ternary uniformly doped epitaxial growth assumed for layers with abrupt interfaces. Since the design I-layer most critical diode operations, thickness varied simulation to calculate maximum leakage current breakdown voltage reverse bias operation, turn on at forward operation. By optimizing structure I-layer, we have demonstrated improved DC characteristics device. S-parameters are then calculated discussed a Single Pole Throw (SPST) switch configuration Diode.
sci-hub.se 参考文章(18)
Parveen, Mridula Gupta, R. S. Gupta, Jyotika Jogi, RF characterization of 100-nm separate gate InAlAs/InGaAs DG-HEMT Microwave and Optical Technology Letters. ,vol. 55, pp. 2796- 2803 ,(2013) , 10.1002/MOP.27935
T. Tauqeer, J. Sexton, F. Amir, M. Missous, Two-Dimensional Physical and Numerical Modelling of InP-based Heterojunction Bipolar Transistors international conference on advanced semiconductor devices and microsystems. pp. 271- 274 ,(2008) , 10.1109/ASDAM.2008.4743335
T. Conklin, S. Naugle, S. Shi, S.M. Frimel, K.P. Roenker, T. Kumar, M.M. Cahay, William E. Stanchina, Inclusion of tunneling and ballistic transport effects in an analytical approach to modeling of NPN InP-based heterojunction bipolar transistors Superlattices and Microstructures. ,vol. 18, pp. 21- 32 ,(1995) , 10.1006/SPMI.1995.1084
Dong-Kyun Ko, Patrick R. Brown, Moungi G. Bawendi, Vladimir Bulović, p-i-n Heterojunction Solar Cells with a Colloidal Quantum-Dot Absorber Layer Advanced Materials. ,vol. 26, pp. 4845- 4850 ,(2014) , 10.1002/ADMA.201401250
K. Kiziloglu, M.W. Yung, Hsiang-Chi Sun, S. Thomas, M.B. Kardos, R.H. Walden, J.J. Brown, W.E. Stanchina, V. Kaman, M.J.W. Rodwell, InP-based high sensitivity pin/HEMT/HBT monolithic integrated optoelectronic receiver international conference on indium phosphide and related materials. pp. 443- 446 ,(1998) , 10.1109/ICIPRM.1998.712506
Nurain Izzati Shuhaimi, Mazita Mohamad, Warsuzarina Mat Jubadi, Ruzaini Tugiman, Nabiah Zinal, Rosnah Mohd Zin, Comparison on I-V performances of Silicon PIN diode towards width variations ieee international conference on semiconductor electronics. pp. 12- 14 ,(2010) , 10.1109/SMELEC.2010.5549491
M. Mohiuddin, Tauseef Tauqeer, J. Sexton, R. Knight, M. Missous, Elimination of Current Blocking in Ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors IEEE Transactions on Electron Devices. ,vol. 57, pp. 3340- 3347 ,(2010) , 10.1109/TED.2010.2074203
Warsuzarina Mat Jubadi, Siti Norafzaniza Mohammad Noor, Simulations of variable I-layer thickness effects on silicon PIN diode I-V characteristics ieee symposium on industrial electronics and applications. pp. 428- 432 ,(2010) , 10.1109/ISIEA.2010.5679427