Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

摘要: Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve sensitivity and excellent timing resolution. Instead, this paper focuses implementation high-performance SPADs manufactured a standard 0.35-micron opto-CMOS technology provided by AMS. We propose series low-noise variable pitch from 20 µm down 5 µm. This opens further way integration large arrays optimized SPAD pixels few micrometers provide high-resolution imagers. experimentally demonstrate that 20-micron appears as most relevant detector terms Signal-to-Noise ratio, enabling emergence SPAD.