Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

摘要: Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks its characteristics sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, cost, making them unsuitable for compact design integrated systems. So, past decade seen a dramatic increase in interest new single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working avalanche mode above breakdown level. When an incident is captured, very fast triggered, generating easily detectable current pulse. This paper discusses fabricated standard CMOS technology featuring both sensitivity, excellent timing resolution, while guaranteeing high integration. In this work, we investigate using AMS 0.35 µm Opto technology. Indeed, allows producing large surface (few mm2) sensitive detectors. Moreover, technologies could associated electronic readout active quenching, digital analog converter, memories any specific processing required build efficient calorimeters1 (Silicon PhotoMultiplier – SiPM) resolution imagers (SPAD imager). The present work investigates geometry. MOS transistor been instead resistor adjust quenching resistance find optimum value. From first set results, detailed study dark count rate (DCR) conducted. Our results show with size photodiodes temperature (at T=22.5 °C, DCR 10 µm-photodiode 2020 s−1 it 270 at T=−40 °C overvoltage 800 mV). A small pixel desirable, because per unit area decreases size. We also found that adjustment depends on temperature. will adjusted subsequent experiments.