Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors

摘要: An algorithm is proposed to include Pauli exclusion principle in Monte Carlo simulations. This has significant advantages implement terms of simplicity, speed, and memory storage; therefore it ideal for the three-dimensional device simulators. The authors show that even moderately high applied fields, one can obtain correct electronic distribution. They give definition temperature quasi-Fermi level become valley dependent. effect including on band profile, temperature, inhomogeneous case a single barrier heterostructure illustrated.