作者: Kyu-Min Han , Jin-Su Yoo
DOI: 10.3938/JKPS.64.1132
关键词:
摘要: In the wet-texturing process, a smaller etch depth of 8 µm was established on each side thin silicon wafer. Formation very small size (1–3 µm) pyramidal structure confirmed c-Si surface through use SEM micrographs. For this with structures, reflectance 15.14% observed. Saw damage removal employed for second and third sets wafers in NaOH (8 wt%) solution, were then textured mixture (1.5 wt%), de-ionized water Isopropyl alcohol (IPA, 6–8 at 80 °C 18 min 24 min, respectively. scraped depths 16 26 wafers, sizes 4–9 9–12 We found that reflectances these 14.98% 14.78%, Our novel approach ultrasonic cleaning, hot treatment, texturing yielded small-sized uniform stable suitable metalized screen printing. Even though high first set illuminated current-voltage (LIV) measurements wafers’ superiority over conventional solar cells terms open-circuit voltage fill factor. The small-size pyramidal-structured single-crystalline showed 17.9% efficiency. Since no solution used saw production cost commercial large-area reduced by nearly 20%.