Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer.

摘要: A micropyramid structure was formed on the surface of a monocrystalline silicon wafer (100) using wet chemical anisotropic etching technique. The main objective to evaluate performance etchant based reflectance. Different isopropyl alcohol (IPA) volume concentrations (2, 4, 6, 8, and 10%) different times (10, 20, 30, 40, 50 min) were selected study total reflectance wafers. other parameters such as NaOH concentration (12% wt.), temperature solution (81.5°C), range stirrer speeds (400 rpm) kept constant for all processes. morphology analyzed by optical microscopy atomic force (AFM). AFM images confirmed well-uniform pyramidal with various average pyramid sizes ranging from 1 1.6 μm. UV-Vis spectrophotometer integrating sphere used obtain reflectivity. textured wafers show high absorbance in visible region. optimum texture-etching found be 4–6% vol. IPA 40 min at which reduced 11.22%.