Surface Morphology and Electrical Resistivity in Polycrystalline Au/Cu/Si(100) System

摘要: This work describes the analysis of morphology and electrical resistivity (ρ) obtained in Au/Cu/Si system. The Au/Cu bilayers were deposited by thermal evaporation technique with thicknesses from 50 to 250 nm on SiOx/Si(100) substrates. Au : Cu concentration ratio samples was 25 : 75 at%. annealed into a vacuum oven argon atmosphere at 660 K for one hour. crystalline structures AuCu CuSi alloys confirmed X-ray diffraction analysis. scanning electron microscopy (SEM), atomic force (AFM), energy dispersive spectroscopy (EDS) used study morphology, final thickness, formed, respectively. four-point probe measure prepared as function thickness. value measured it numerically compared Fuchs–Sondheimer (FS) Mayadas–Shatzkes (MS) models resistivity. Results show values between 0.9 1.9 μΩ-cm. These are four times smaller than systems reported literature.