Formation of Graphene–Silicon Junction by Room Temperature Reduction With Simultaneous Defects Removal

摘要: A novel method of preparing reduced graphene oxide (rGO)–silicon (Si) junctions free from native silicon layer at room temperature is reported. The based on a simultaneous reduction–dissolution reaction between (GO) and fresh Si atoms with the assistance dilute hydrofluoric acid (HF). rGO–Si junction characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, atomic force microscopy. mechanism proposed that oxidized dissolved HF, which transfers electronic holes to GO facilitates removal its oxygen-containing groups. use HF provides unique benefit contact formation removed instantaneously only surface in rGO. Therefore, new strategy rGO-native oxide-free interface, has been fundamental challenge fabrication graphene–Si junction. Electrical tests show interface slightly higher barrier than Al–Si.