Atomic layer deposition of cobalt from cobalt metallorganic compounds

摘要: Cobalt thin films were prepared by atomic layer deposition (ALD). The precursor cobalt(II) acetylacetonate [Co(C 5 H 7 O 2 ) ] was used to selectively deposit onto iridium substrates using hydrogen reduction. growth observed on SiO , silicon, fluorinated silica glass (FSG), and tantalum when silane as a reducing agent.