Semiconductor electrode comprising a blocking layer

摘要: The present invention provides a porous semiconductor electrode passivated by way of layer applied an atomic deposition (ALD) process. can be advantageously used in dye-sensitized solar cells (DSCs) having increase open current voltages (Voc). By selecting the thickness and material passivating or blocking layer, high Voc without substantial reduction short circuit (JSC) is achieved, thereby resulting devices exhibiting excellent power conversion efficiencies.