Metal oxide TFT with improved stability and mobility
作者： Juergen Musolf , Fatt Foong , Chan-Long Shieh , Gang Yu , Tian Xiao
DOI:
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摘要: A thin film circuit includes a transistor with metal oxide semiconductor channel having conduction band minimum (CBM) first energy level. The further layer of passivation material covering at least portion the channel. has second level being lower than, equal to, or no more than 0.5 eV above is used for an electronic device including any one AMLCD, AMOLED, AMLED, AMEPD.
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