Secure non-volatile memory cell

摘要: An improved EEPROM cell structure is disclosed which provides protection against external detection of data stored within the cell. One or more cavities filled with a high etching film and extending in substantially vertical direction are provided region adjacent to an end floating gate such that during attempted deprocessing using process, etchant will rapidly diffuse through these expose via before exposing removing control insulating layers overlapping gate. Any charge once present on dissipate can be removed, thereby making it impossible read In another embodiment, sliver extends laterally beyond any reaching prior gate, discharging removed.