作者: R. S. Liu , See-Hun Yang , Xin Jiang , X.-G. Zhang , Charles Rettner
DOI: 10.1103/PHYSREVB.87.024411
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摘要: We report the spin-dependent quantum well resonant tunneling effect in CoFe/MgO/CoFe/MgO/CoFeB (CoFe) double barrier magnetic tunnel junctions. The dI/dV spectra reveal clear peaks for parallel magnetization configurations, which can be matched to resonances obtained from calculation. differential TMR exhibits an oscillatory behavior with a sign change due formation of QW states middle CoFe layer. Also, we observe pronounced enhancement at voltages room temperature, suggesting that it is very promising achieve high using effect.