Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

摘要: Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental the reading process. It would quite convenient therefore modulate efficiency of torque. A solution adding an extra degree freedom using double barrier tunnel junctions with two spin-polarizers, controllable relative alignment. We demonstrate, for these structures, that amplitude in-plane on middle free layer efficiently tuned via configuration electrodes. Using proposed design could thus pave way towards more reliable read/write schemes MRAM. Moreover, our results suggest intriguing effect associated out-of-plane (field-like) torque, which has further investigated.