Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

摘要: Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the with different deposition processing have microstructure properties. The confinement effect, tensile stresses, defects, and Fano effect all a great influence line shape of Raman scattering peak. But results are different. surface layer two important mechanisms dominating internal stress in three types films. For low-stress film, stresses mainly due to change after thermal annealing. flat film induced carbide at surface. After doped boron atoms, phenomenon increasing can be explained increase content carbide. We also investigated disorder degree states for analyzing constant C. larger than phase transformation there is no obvious some regions even decreases.