Lpcvd Polycrystalline Silicon Thin Films: The Evolution of Structure, Texture and Stress
作者： P. Krulevitch , Tai D. Nguyen , G. C. Johnson , R. T. Howe , H. R. Wenk
DOI: 10.1557/PROC-202-167
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摘要: An investigation of undoped LPCVD polycrystalline silicon films deposited at temperatures ranging from 605 to 700 C and silane pressures 300 550 mTorr revealed large variations in stress with processing conditions a correlation between texture. TEM HRTEM analysis show that morphology differences also exist. At lower (≈605 C) higher (≈400 mTorr), the appear deposit an amorphous state crystallize during deposition form microstructures characterized by equi-axed grains, tensile residual stress, texture {110} {11/} (/=2 or 3) components. Higher (between 620 650 produce nucleate Si02 interface, creating oriented columnar microstructure. C, grains are still columnar, but dominant is {100}. Films greater than exhibit compressive some contain regions hexagonal silicon. This paper proposes possible causes varying stresses, textures, films.
sci-hub.se 参考文章(25)
Ted Kamins, Polycrystalline Silicon for Integrated Circuit Applications ,(2011)
E. Kinsbron, M. Sternheim, R. Knoell, Crystallization of amorphous silicon films during low pressure chemical vapor deposition Applied Physics Letters. ,vol. 42, pp. 835- 837 ,(1983) , 10.1063/1.94080
J. Adamczewska, T. Budzyński, Stress in chemically vapour-deposited silicon films Thin Solid Films. ,vol. 113, pp. 271- 285 ,(1984) , 10.1016/0040-6090(84)90469-3
H. R. Wenk, M. Sintubin, J. Huang, G. C. Johnson, R. T. Howe, Texture analysis of polycrystalline silicon films Journal of Applied Physics. ,vol. 67, pp. 572- 574 ,(1990) , 10.1063/1.345196
M. Hendriks, R. Delhez, Th. H. de Keijser, S. Radelaar, F. H. P. M. Habraken, A. E. T. Kuiper, P. R. Boudewijn, X‐ray diffraction study and electrical characterization of boron‐implanted low‐pressure chemical vapor deposited polycrystalline silicon layers Journal of Applied Physics. ,vol. 56, pp. 2751- 2761 ,(1984) , 10.1063/1.333806
J. Bloem, A.M. Beers, In situ observations on amorphous versus crystalline growth of silicon by chemical vapour deposition Thin Solid Films. ,vol. 124, pp. 93- 100 ,(1985) , 10.1016/0040-6090(85)90250-0
E. A. Matson, S. A. Polyakov, On the ``evolutionary selection'' principle in relation to the growth of polycrystalline silicon films Physica Status Solidi (a). ,vol. 41, ,(1977) , 10.1002/PSSA.2210410167
A. Brokman, R. Gat, Y. Alpern, Morphological effects during low pressure chemical vapor deposition and annealing of undoped polycrystalline silicon layers Applied Physics Letters. ,vol. 49, pp. 382- 384 ,(1986) , 10.1063/1.97594
V.M. Koleshko, V.F. Belitsky, I.V. Kiryushin, Stresses in thin polycrystalline silicon films Thin Solid Films. ,vol. 162, pp. 365- 374 ,(1988) , 10.1016/0040-6090(88)90225-8
Roger T. Howe, Surface micromachining for microsensors and microactuators Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 6, pp. 1809- 1813 ,(1988) , 10.1116/1.584158