Stress and Microstructure in Lpcvd Polycrystalline Silicon Films: Experimental Results and Closed Form Modeling of Stresses
作者： P. Krulevitch , G. C. Johnson , R. T. Howe
DOI: 10.1557/PROC-239-13
关键词:
摘要: … pressure chemical vapor deposition (LPCVD). The average in-plane film stress and the stress gradient through the film thickness … The normal stresses outside dte inclusion at r = 0 are …
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