Chemical stability of (NH4)2S-passivated InP(001) surfaces – investigations by XPS and XPD

作者: H. Peisert , P. Streubel , T. Chassé , R. Szargan

DOI: 10.1007/S002160050383

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摘要: UV/ozone supported surface oxidation of wet chemically cleaned and sulfurized InP(001) was investigated using XPS in order to study the chemical stability (NH4)2S-passivated surfaces. Sulfur coverages about one monolayer thickness were not sufficient completely passivate InP against oxidation. Similar oxides substrate components observed at Evidence for passivation found incorporated sulfur (In-S bonds), lower growth rate oxide layer its reduced comparably large exposures. The be amorphous all stages process, as proved by X-ray photoelectron diffraction.

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