Growth of p-type ZnO thin films by using an atomic layer epitaxy technique and NH3 as a doping source
作者： Chongmu Lee , Su Young Park , Jongmin Lim , Hyoun Woo Kim , None
DOI: 10.1016/J.MATLET.2006.09.044
关键词:
摘要: Abstract Nitrogen-doped, p-type ZnO thin films have been grown successfully on sapphire (0001) substrates by atomic layer epitaxy (ALE) using Zn(C 2 H 5 ) [Diethylzinc, DEZn], O and NH 3 as a zinc precursor, an oxidant doping source gas, respectively. The lowest electrical resistivity of the ALE was 210 Ω cm with hole concentration 3.41 × 10 16 cm − 3 . Low temperature-photoluminescence analysis results support that nitrogen after annealing is semiconductor. Also model for change from n-type to proposed.
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