The Future Of ZnO Light Emitters
作者： D. C. Look , B. Claflin , Ya. I. Alivov , S. J. Park
关键词: Absorption (electromagnetic radiation) 、 High-electron-mobility transistor 、 Wavelength range 、 Radiation emission 、 Quantum well 、 Photoelectric effect 、 Electrical resistivity and conductivity 、 Materials science 、 Homojunction 、 Optoelectronics
摘要: Compact, solid-state UV emitters have many potential applications, and ZnO-based materials are ideal for the wavelength range 390 nm lower. However, most efficient p-n junctions, p-type ZnO is difficult to make. Thus, future of light depends on either producing low-resistivity ZnO, or in mating n-type with a hole injector. Perhaps best device so far involves an n-ZnO/p-AlGaN/n-SiC structure, which produces intense ± 1 emission at both 300 K 500 K. development p-ZnO proceeding rapid pace, homojunction should be available soon.
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