Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping
作者： T. Mitsuyu , K. Ohkawa , O. Yamazaki
DOI: 10.1063/1.97374
关键词:
摘要: Low‐energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth ZnSe on GaAs substrates an attempt to obtain p‐type crystals. Low‐temperature photoluminescence (PL) measurements N‐doped indicated a formation shallow acceptors with activation energy around 110 meV. The PL spectrum excitonic emission region was dominated by acceptor bound‐exciton I1 at 2.790 eV, suggesting remarkable increase concentration comparison previous work MBE using neutral source.
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