Large neutral barrier at grain boundaries in chalcopyrite thin films.
作者： Michael Hafemeister , Susanne Siebentritt , Jürgen Albert , Martha Ch. Lux-Steiner , Sascha Sadewasser
DOI: 10.1103/PHYSREVLETT.104.196602
关键词:
摘要: The electronic structure of grain boundaries in polycrystalline Cu(In,Ga)Se2 thin films and their role on solar cell device efficiency is currently under intense investigation. A neutral barrier about 0.5 eV has been suggested as the reason for benign behavior chalcopyrites. Previous experimental investigations have fact shown a but only few 10 meV high, which cannot be expected to significant influence efficiency. Here we show that full investigation electrical charged shows existence an additional narrow barrier, several 100 tunneled through by majority carriers sufficiently high explain boundaries.
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