Properties of electronic potential barriers at grain boundaries in Cu(In,Ga)Se2 thin films
作者： Robert Baier , Caspar Leendertz , Daniel Abou-Ras , Martha Ch. Lux-Steiner , Sascha Sadewasser
DOI: 10.1016/J.SOLMAT.2014.07.002
关键词: Charge carrier 、 Microscopy 、 Negative potential 、 Crystal structure 、 Crystallography 、 Grain boundary 、 Materials science 、 Chalcopyrite 、 Kelvin probe force microscope 、 Thin film 、 Condensed matter physics
摘要: Abstract The lack of an efficiency increase with increasing Ga content in Cu(In,Ga)Se2 solar cells has attracted much scientific interest. It been claimed that the physical properties grain boundaries are responsible for this curious effect. Here, we present in-depth analysis electronic potential barriers at (GBs) a series (CIGSe) thin films using Kelvin probe force microscopy (KPFM) measurements, extending our previous study [Baier et al., Sol. Energy Mater. Cells 103 (2012) 86–92]. (i) show, by comparison data crystal lattice orientations, localization GBs purely from KPFM topography allows reliable GBs. (ii) We consider averaging effect due to long-range electrostatic forces GB determine real barrier height each individual GB; variations ranging −400 +400 mV. (iii) different origin positive and negative quantitative results charge carrier concentration defect densities From do not observe any systematic variation these quantities content.
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