Charge carrier transport in polycrystalline CuGaSe/sub 2/ thin films
作者： S. Schuler , S. Nishiwaki , J. Beckmann , N. Rega , S. Brehme
DOI: 10.1109/PVSC.2002.1190612
关键词:
摘要: The mechanism of charge carrier transport in stoichiometric polycrystalline CuGaSe/sub 2/ has been studied the temperature range 80-350 K using Hall effect and conductivity measurements. layers were grown on soda-lime glass substrates by physical vapour deposition. At 300 we found mobility values 10-20 cm/sup 2//Vs. A thermally activated behavior mobilities these films was observed 150-300 K. Intergrain potential barriers limiting determined to vary between 60 130 meV. Using grain boundary barrier trapping model developed for Si density charged states at boundaries calculated be about 1.2e12 -2/. This value does not depend net doping concentration samples significantly, suggesting that position relevant defect is above Fermi level. Above limited only but also in-grain mobility.
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