Comparison of device performance and measured transport parameters in widely‐varying Cu(In,Ga) (Se,S) solar cells

摘要: We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process in multiple laboratories. This collection samples exhibits a wide variation morphologies, compositions, and solar power conversion efficiencies. An characterization properties is reported here—including those derived from capacitance–voltage, admittance spectroscopy, deep level transient time-resolved photoluminescence, Auger emission profiling, Hall effect, drive capacitance profiling. Data each technique examined for correlation with device performance, providing indicators related compared determine which techniques interpretations provide credible values properties. Although these are not sufficient predict all aspects current-voltage characteristics, we have identified specific physical that can be combined using model-based analysis algorithm quantitative prediction voltage loss absorber. The approach has potential as tool optimize understand performance irrespective used fabricate CIGSS layer. Copyright © 2005 John Wiley & Sons, Ltd.