Correlative microscopy analyses of thin-film solar cells at multiple scales

摘要: Abstract In the present work, a brief overview is given on how to apply transmission (TEM) as well scanning electron microscopy (SEM) and their related techniques (electron diffraction, energy-dispersive X-ray spectrometry, energy-loss spectroscopy, holography; backscatter electron-beam-induced current, cathodoluminescence) for analysis of interfaces between individual layers or extended structural defects in thin-film stack. All examples work were recorded Cu(In, Ga)Se2 thin film solar cells, however, shown experimental approaches may be used any similar semiconductor device. A particular aspect application various same identical specimen area, order enhance insight into structural, compositional, electrical properties. For (aberration-corrected) TEM, spatial resolutions such measurements can low subnanometer scale. However, when dealing with devices, it often necessary characterize optoelectronic properties at larger scales, few 10 nm up even mm, which SEM more appropriate. At time, these scales provide also enhanced statistics analysis. review, outlined combination scanning-probe optical microscopy, positions. Altogether, multiscale toolbox provided thorough structure-property relationships cells using correlative approaches.