Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process

摘要: Precursor solutions and a solution process were developed for the fabrication of amorphous oxide thin-film transistors (TFTs). All layers TFTs comprised films prepared from precursor solutions. The gate lines, insulator, channel layer ruthenium oxide, lanthanum zirconium indium zinc films. polysilazane-based silicon dioxide film was used stopper layer. source-line drain electrode had double-layer structure comprising tin silsesquioxane-based passivation pixel electrodes, respectively. exhibited field effect mobility 2.68 cm2 V−1 s−1, sub-threshold swing 1.09 V/decade, threshold voltage 3.06 V, an on/off ratio 105. Active-matrix electrophoretic displays (EPDs) with resolution 101.6 ppi successfully fabricated using all-solution-processed TFTs. Bi-stable black/white images confirmed in these TFT-EPDs first time.