Synthesis of Ruthenium Dioxide Thin Films by a Solution Chemistry Technique

摘要: Smooth, fine-grained RuO{sub 2} thin films have been synthesized and deposited onto silicon substrates via a solution chemistry technique. Ruthenium(III) chloride n-hydrate dissolved in ethanol was used as the precursor solution. Thin from 0.38M were spun at 4,000 rpm for 20 s fired temperatures between 400 800 C. XRD analysis shows that forms over this entire temperature range. Using an appropriate firing schedule, grain growth can be controlled reproduced to provide uniform size distribution consisting of equiaxed, submicrometer diameter grains. The electrical resistance has measured 300 K using conventional four-point probe resistivity values range 1.8 {micro}{Omega}{center_dot}m with average 250 nm 3.1 30 presence residual carbon hydrogen is not believed significant effect on resistivity.