Dry plasma processing for industrial crystalline silicon solar cell production

作者: M. Hofmann , J. Rentsch , R. Preu

DOI: 10.1051/EPJAP/2010131

关键词:

摘要: This paper gives an overview on the standard crystalline silicon solar cell manufacturing processes typically applied in industry. Main focus has been put plasma which can replace existing, mainly wet chemical within process flow. Finally, additional are presented suited for higher-efficient cells, i.e. “passivated emitter and rear cell” concept (PERC) or “heterojunction with intrinsic thin layer” approach (HIT). Plasma deposition of dielectric semiconducting layers surface passivation, anti-reflective coating purposes presented. etching removal phosphorus silicate glass parasitic emitters, wafer cleaning masked mask-free texturisation discussed.

参考文章(25)
Armin G. Aberle, Crystalline silicon solar cells : advanced surface passivation and analysis Centre for Photovoltaic Devices and Systems, University of New South Wales. ,(1999)
Wissenschaftlicher Beirat Der Bundesregierung Globale Umweltveränderungen Wbgu, H.J. Schellnhuber, H. Graßl, R. Schubert, E. D. Schulze, M.E. Kulessa, A. Epiney, J. Luther, F. Nuscheler, R. Sauerborn, Welt im Wandel: Armutsbekämpfung durch Umweltpolitik : Zusammenfassung für Entscheidungsträger Springer. ,(2004)
Wissenschaftlichen Beirat der Bundesregierung Globale, Welt im Wandel: Energiewende zur Nachhaltigkeit Mitglieder des Wissenschaftlichen Beirats der Bundesregierung Globale Umweltveränderungen. ,(2003) , 10.1007/978-3-642-55861-0
H. Mäckel, R. Lüdemann, Detailed study of the composition of hydrogenated SiNx layers for high-quality silicon surface passivation Journal of Applied Physics. ,vol. 92, pp. 2602- 2609 ,(2002) , 10.1063/1.1495529
S. W. Glunz, D. Biro, S. Rein, W. Warta, Field-effect passivation of the SiO2Si interface Journal of Applied Physics. ,vol. 86, pp. 683- 691 ,(1999) , 10.1063/1.370784
Jan Benick, Bram Hoex, M. C. M. van de Sanden, W. M. M. Kessels, Oliver Schultz, Stefan W. Glunz, High efficiency n-type Si solar cells on Al2O3-passivated boron emitters Applied Physics Letters. ,vol. 92, pp. 253504- ,(2008) , 10.1063/1.2945287
T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein, J. M. Cook, High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 16, pp. 239- 249 ,(1998) , 10.1116/1.580978
G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H.F.W. Dekkers, S. De Wolf, G. Beaucarne, Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge Solar Energy Materials and Solar Cells. ,vol. 90, pp. 3438- 3443 ,(2006) , 10.1016/J.SOLMAT.2006.04.014
Stefaan De Wolf, Guido Agostinelli, Guy Beaucarne, Petko Vitanov, Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation Journal of Applied Physics. ,vol. 97, pp. 063303- ,(2005) , 10.1063/1.1861138
I. Martı́n, M. Vetter, A. Orpella, J. Puigdollers, A. Cuevas, R. Alcubilla, Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiC x :H films Applied Physics Letters. ,vol. 79, pp. 2199- 2201 ,(2001) , 10.1063/1.1404406