作者: Ranjit S. Mand , Masaru Nakamura
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摘要: An optoelectronic bistable apparatus having a double heterojunction structure comprising light-emitting first semiconductor layer of n type GaAs interlaid between second n- AlGaAs and third p+ AlGaAs, the layers broader energy gap than that layer. extremely thin fourth with high impurity concentration is deposited on A fifth n+ formed At least portion which contacts has