Integration of transistors with vertical cavity surface emitting lasers
作者： Jack L. Jewell , Gregory R. Olbright
DOI:
关键词: Band gap 、 Optoelectronics 、 Refractive index 、 Substrate (electronics) 、 Transistor 、 Optical cavity 、 Materials science 、 Diode 、 Vertical-cavity surface-emitting laser 、 Laser 、 Optics
摘要: 2128539 9314520 PCTABScor01 Optoelectronic integrated circuits (110) are disclosed comprising a vertical-cavity surface emitting laser (VCSEL) (118) and transistor (116). The VCSEL comprises cavity sandwiched between two distributed Bragg reflectors. pair of spacer layers (142, 144) surrounding one or more active, optically quantum-well (3) having bandgap in the visible range which serves as active material device. thickness is m.lambda./2neff where m an integer, .lambda. free-space wavelength radiation neff effective index refraction cavity. Electrical pumping achieved by heavily doping bottom mirror (145) substrate to conductivity-type regions upper (141) with opposite conductivity type form diode structure applying suitable voltage structure. Embodiments integrate bipolar (126, 136) FET (316) transistors well phototransistors (416).
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