作者: W. K. Chan , J. P. Harbison , A. C. von Lehmen , L. T. Florez , C. K. Nguyen
DOI: 10.1063/1.104919
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摘要: Vertical cavity surface‐emitting lasers are integrated with GaAs/AlGaAs heterojunction phototransistors to yield optically controlled lasers. The two‐terminal device operates in several modes: As an amplifier a large signal, external optical gain of 5, as logic gate, and or electrically triggerable latch. AND gate has output on‐to‐off ratio 10:1. Although the no feedback, latching is achieved appropriate biasing through impact ionization. structure advantageous for forming two‐dimensional arrays signal processing.