Memory effect of pentacene field-effect transistors with embedded monolayer of semiconductor colloidal nano-dots

摘要: Abstract We demonstrate memory effect of pentacene-based field-effect transistors (FETs) in which CdSe/ZnS colloidal nano-dots (NDs) are embedded. The NDs were dispersed chloroform, and spread over a water surface to form monolayer NDs. Then, they transferred onto 30-nm-thick poly(methyl methacrylate) (PMMA) by horizontal lifting method, pentacene film was deposited as an active layer fabricate FETs. threshold voltage ( V th ) shifted ∼10 V after writing 70–100 V applied the gate electrode memory-FETs. On other hand, such large shift not observed for reference pentacene-FETs without consider that is due electrons trapped at interface PMMA layers.