Thermal stability of N2–H2 plasma-treated metal-organic-vapor-deposition TiN in a W/TiN/Ti/Si system
作者： Sung-Ho Jung , Sam-Dong Kim
DOI: 10.1088/0268-1242/26/10/105010
关键词:
摘要: We examined the thermal stability of a W/TiN/Ti/Si metallization system by changing thickness ratios plasma-treated (PT) to plasma-untreated regions (5 nm × 6/0 nm, 5 4/10 3/15 2/20 and 0/30 nm/nm) for metal-organic-chemical-vapor-deposition (MOCVD) TiN diffusion barriers. From in situ film stress measurements taken during cycles, best was achieved when about half at bottom MOCVD-TiN N2–H2 PT. X-ray photoelectron spectroscopy cross-sectional transmission electron microscopy revealed that this barrier structure successfully prevented interdiffusion diffusing species from WSi2 formation interface even after annealing 850 °C 30 min, superior due microstructural evolution comprising amorphous layer top oxygen-stuffed crystalline bottom. same plasma-treatment condition, lowest leakage currents were obtained both n+ p+ 10 k array chains contacts with diameter 350 an aspect ratio ~1.
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