Reaction kinetics in tungsten/barrier metal/silicon systems
作者： K. Suguro , Y. Nakasaki , T. Inoue , S. Shima , M. Kashiwagi
DOI: 10.1016/0040-6090(88)90360-4
关键词: Ohmic contact 、 Diffusion barrier 、 Tungsten 、 Annealing (metallurgy) 、 Tin 、 Materials science 、 Activation energy 、 Silicon 、 Analytical chemistry 、 Metallurgy 、 Barrier layer
摘要: Abstract The reaction kinetics and electrical properties of the W/TiN/TiSi2/Si W/TiN/Si systems are described. By using TiN/TiSi2 TiN diffusion barrier layer, tungsten silicidation rate is successfully lowered by 2 orders 4.5 magnitude respectively, compared with W/Si system. resistivity 8 μΩ cm after 950°C annealing in N2. considering activation energy WSi2 formation, for W/TiN/TiSi2 system found to be controlled silicon supply at bottom rate-limiting process considered bond breaking TiSi2-Si interface. driving force reduction caused W-TiN 100 A films thick enough maintain thermal stability, i.e. suppress reactions adhesion even 5 h. good ohmic contact order 10-6 Ω cm2 could obtained TiN/p+-Si increasing interfacial hole density up (8–10) × 1019 cm-3. Some application examples proposed W/barrier layer/Si systems.
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